Evidence of indirect gap in monolayer WSe2

Wei Ting Hsu, Li Syuan Lu, Dean Wang, Jing Kai Huang, Ming Yang Li, Tay Rong Chang, Yi-Chia Chou, Zhen Yu Juang, Horng Tay Jeng, Lain Jong Li, Wen-Hao Chang*

*Corresponding author for this work

研究成果: Article同行評審

46 引文 斯高帕斯(Scopus)


Monolayer transition metal dichalcogenides, such as MoS2 and WSe2, have been known as direct gap semiconductors and emerged as new optically active materials for novel device applications. Here we reexamine their direct gap properties by investigating the strain effects on the photoluminescence of monolayer MoS2 and WSe2. Instead of applying stress, we investigate the strain effects by imaging the direct exciton populations in monolayer WSe2-MoS2 and MoSe2-WSe2 lateral heterojunctions with inherent strain inhomogeneity. We find that unstrained monolayer WSe2 is actually an indirect gap material, as manifested in the observed photoluminescence intensity-energy correlation, from which the difference between the direct and indirect optical gaps can be extracted by analyzing the exciton thermal populations. Our findings combined with the estimated exciton binding energy further indicate that monolayer WSe2 exhibits an indirect quasiparticle gap, which has to be reconsidered in further studies for its fundamental properties and device applications.

頁(從 - 到)7
期刊Nature Communications
出版狀態Published - 1 十二月 2017

指紋 深入研究「Evidence of indirect gap in monolayer WSe<sub>2</sub>」主題。共同形成了獨特的指紋。