Evaluation of ultra-low specific contact resistance extraction by cross-bridge Kelvin resistor structure and transmission line method structure

Bing-Yue Tsui, Hsuan Tzu Tseng

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

This work evaluates the accuracy of the specific contact resistance extraction by the cross-bridge Kelvin resistor (CBKR) structure and the self-aligned transmission line method (mTLM) structure considering three-dimensional effect. The mTLM structure is more accurate than the CBKR structure in theory but more sensitive to process variation. The sensitivity to process variation could be suppressed by averaging large amount data. Nevertheless, the recessed contact interface would underestimate the true specific contact resistance and would cause complicated extraction problem for both test structures as the contact resistivity becomes less than 10 -8 ohm-cm2.

原文English
主出版物標題2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面58-63
頁數6
ISBN(列印)9781479921928
DOIs
出版狀態Published - 1 一月 2014
事件27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy
持續時間: 24 三月 201427 三月 2014

出版系列

名字IEEE International Conference on Microelectronic Test Structures

Conference

Conference27th International Conference on Microelectronic Test Structures, ICMTS 2014
國家Italy
城市Udine
期間24/03/1427/03/14

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