Evaluation of plasma charging damage in ultrathin gate oxides

Horng-Chih Lin*, Chi Chun Chen, Chao-Hsin Chien, Szu Kang Hsein, Meng Fan Wang, Tien-Sheng Chao, Tiao Yuan Huang, Chun Yen Chang

*Corresponding author for this work

研究成果: Review article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.

原文English
頁(從 - 到)68-70
頁數3
期刊IEEE Electron Device Letters
19
發行號3
DOIs
出版狀態Published - 1 三月 1998

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