ESD protection design for giga-Hz RF CMOS LNA with novel impedance-isolation technique

Ming-Dou Ker, Chien Ming Lee

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

A novel ESD protection design with impedance-isolation technique is proposed and successfully verified in a 0.25-μm CMOS process with top thick metal. Its purpose is to reduce the detrimental effect of the on-chip ESD protection circuit on the power gain and noise figure of an RF LNA circuit. With the resonance of LC-tank, the impedance generated from the ESD protection devices can be isolated from the input node of RF LNA at the operation frequency, so the power gain loss and noise figure of RF LNA can be successfully codesigned with the desired ESD robustness. The proposed ESD protection circuit with novel impedance-isolation technique will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).

原文English
主出版物標題2003 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
發行者ESD Association
ISBN(電子)1585370576, 9781585370573
出版狀態Published - 1 一月 2003
事件25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003 - Las Vegas, United States
持續時間: 21 九月 200325 九月 2003

出版系列

名字Electrical Overstress/Electrostatic Discharge Symposium Proceedings
2003-January
ISSN(列印)0739-5159

Conference

Conference25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
國家United States
城市Las Vegas
期間21/09/0325/09/03

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