Equivalent noise temperature representation for scaled MOSFETs

Hiroshi Shimomura*, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

研究成果: Article同行評審

摘要

We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.

原文English
頁(從 - 到)1550-1552
頁數3
期刊IEICE Transactions on Electronics
E93-C
發行號10
DOIs
出版狀態Published - 十月 2010

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