Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

Chia Chu Cheng, Chu Chun Wu, Yen Ting Fan, Jenq Shinn Wu, Sheng-Di Lin*

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.

原文English
文章編號095029
期刊AIP Advances
8
發行號9
DOIs
出版狀態Published - 1 九月 2018

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