Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage

T. C. Chang, Y. S. Mor, Po-Tsun Liu, T. M. Tsai, C. W. Chen, Y. J. Mei, S. M. Sze

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

The interaction between low-k hydrogen silsesquioxane (HSQ) film and wet stripper was investigated. The wet stripper has been commonly used to remove photoresister in IC integration processing. However, the high content of alkalinity in the stripper solution often leads to the hydrolysis of HSQ film, forming dangling bonds in the HSQ. The dangling bonds in the HSQ film can easily react with hydroxide ion (OH-) in wet stripper solution and form Si-OH bonds. The resultant HSQ film will tend to uptake water and consequently increase both the leakage current and dielectric constant. In this study, H2-plasma pre-treatment was applied to the HSQ film. The hydrogen plasma treatment passivates the HSQ surface and prevent HSQ from water uptake during photoresist stripping. Therefore, dielectric degradation can be avoided with the H2-plasma pre-treatment.

原文English
頁(從 - 到)523-526
頁數4
期刊Thin Solid Films
398
發行號399
DOIs
出版狀態Published - 十一月 2001

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