Enhanced thermal dissipation and light output of GaN/Sapphire light-emitting diodes by direct Cu electroplating

C. C. Chiang, Ray-Hua Horng, D. S. Wuu, H. Y. Hsiao, C. Y. Hsieh, H. I. Lin

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Using the self-alignment lithography and copper (Cu) electroplating techniques, a lateral-electrodes GaN light-emitting diode (LED) with a micro reflective cup and heat spreader has been demonstrated. In this work, the photoresist is used to be the electroplating forms and to produce micro reflective cup and 9 mm2 heat spreader. Under 1 A current driving, the LEDs with direct thermal spreader has an output power of 700 mW and a power conversion efficiency is upto 2 times as compared with that of the lateral-electrodes LEDs only on sapphire without current spreader. The performance of LEDs with a micro reflective cup and heat spreader is almost the same (even better) as the vertical-electrodes LEDs on Cu substrate.

原文English
主出版物標題ECS Transactions - State-of-the-Art Program on Compound Semiconductors 48, SOTAPOCS 48 -and- ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications
頁面13-18
頁數6
版本3
DOIs
出版狀態Published - 17 十一月 2008
事件48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting - Phoenix, AZ, United States
持續時間: 18 五月 200822 五月 2008

出版系列

名字ECS Transactions
號碼3
13
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference48th State-of-the-Art Program on Compound Semiconductors, (SOTAPOCs 48) and the ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications - 213th ECS Meeting
國家United States
城市Phoenix, AZ
期間18/05/0822/05/08

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