Enhanced short-channel effects in NMOSFETs due to boron redistribution induced by arsenic source and drain implant

D. K. Sadana, A. Acovic, G. Shahidi, H. Hanafi, A. C. Warren, D. Grutzmacher, F. Cardone, J. Sun, B. Davari

研究成果: Conference contribution

19 引文 斯高帕斯(Scopus)

摘要

The experimentally observed VT roll-off and Drain Induced Barrier Lowering (DIBL) at channel lengths of approximately=0.2 μ m in Si-MOSFETs is underestimated by conventional 2D numerical simulations. In this paper it is shown that this is due to B segregation from the channel region towards the As-implanted source/drain regions during the As activation anneal. The resulting B depletion close to the source and drain lowers the local VT and contributes significantly (up to 50% in 0.2 μ m n-channel MOSFETs) to the VT roll-off and DIBL in sub-quarter micron NMOSFETs. This B redistribution originates mainly from ion implantation damage in the source and drain.

原文English
主出版物標題1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
發行者Institute of Electrical and Electronics Engineers Inc.
頁面849-852
頁數4
ISBN(電子)0780308174
DOIs
出版狀態Published - 1992
事件1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
持續時間: 13 十二月 199216 十二月 1992

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
1992-December
ISSN(列印)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
國家United States
城市San Francisco
期間13/12/9216/12/92

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