Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate

Wei Chih Peng, Yew-Chuhg Wu*

*Corresponding author for this work

研究成果: Article同行評審

57 引文 斯高帕斯(Scopus)

摘要

An InGaN-GaN light-emitting diode (LED) with a roughened undoped-GaN surface and a silver mirror on the sapphire substrate was fabricated through a double transfer method. It was found that, at an injection current of 20 mA, its luminance intensity was 100% larger than conventional LEDs. Its output power was 49% larger than conventional LEDs.

原文English
文章編號181117
期刊Applied Physics Letters
88
發行號18
DOIs
出版狀態Published - 1 五月 2006

指紋 深入研究「Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate」主題。共同形成了獨特的指紋。

引用此