Enhanced ferroelectric properties of Pb(Zr0.53Ti 0.47)O3 thin films on SrRuO3/Ru/SiO 2/Si substrates

Y. K. Wang, Tseung-Yuen Tseng, Pang Lin

研究成果: Article同行評審

80 引文 斯高帕斯(Scopus)

摘要

Highly (110)-oriented Pb(Zr0.53Ti0.47)O3 (PZT) films were deposited on SrRuO3 (SRO)/Ru/SiO2/Si substrates using a sol-gel method, in which SrRuO3 films were deposited at various substrate temperatures. The crystallinity of the PZT films was improved after the annealing process. The leakage current, dielectric constant, and polarization versus electric-field characteristics of PZT films were strongly dependent on the annealing and deposition temperatures of the SRO films. The 650°C annealed PZT film grown on SRO has a leakage current of 9×10-7A/cm2 at an applied field of 500 kV/cm, dielectric constant of 1306, remanent polarization (Pr) of 40.1μC/cm2 and coercive field (Ec) of 78.5 kV/cm at an applied voltage of 5 V. The PZT films indicated fatigue-free characteristics up to ∼1.0×1012 switching cycles under 5 V bipolar pulse.

原文English
頁(從 - 到)3790-3792
頁數3
期刊Applied Physics Letters
80
發行號20
DOIs
出版狀態Published - 20 五月 2002

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