Enhanced electron emission from phosphorus- and boron-doped diamond-clad Si field emitter arrays

T. K. Ku*, S. H. Chen, C. D. Yang, N. J. She, F. G. Tarntair, C. C. Wang, C. F. Chen, I. J. Hsieh, Huang-Chung Cheng

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma chemical vapordeposition (MPCVD) has been developed to improve the characteristics of electron field emission from the pure Si tips. A uniform and smooth coating morphology for the diamond-clad Si tips have been achieved. Electron emission currents of diamond-clad tips are much higher than those of pure Si tips. Such great improvement is attributed to the lowering of the effective work function in the diamond-clad tips. The effects of phosphorus- and boron-doped diamond-clad Si tips have been also studied in comparison with the undoped ones. The current-voltage characteristics of the undoped diamond-clad tips were further enhanced by the in-situ doping of phosphorus or boron due to a higher electron supplement. Moreover, the P-doped diamond-clad tips show a better field emission performance as compared to the B-doped ones. This difference is surmised to be associated with the higher electron conductivity and defect densities of P-doped diamond films.

原文English
頁(從 - 到)176-180
頁數5
期刊Thin Solid Films
290-291
DOIs
出版狀態Published - 15 十二月 1996

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