Embedded InN dot-like structure within InGaN layers using gradient-Indium content in nitride-based solar cell

Lung Hsing Hsu, Chien-Chung Lin, Ming Hsuan Tan, Yun Ling Yeh, Da Wei Lin, Hau Vei Han, Hao-Chung Kuo

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

The novel design of embedded InN dot-like structure within InGaN was useful as an absorption layer in photovoltaic (PV) cells. We constructed the simulation model by employing the commercial software APSYS® and integrating the absorption coefficient of thin InN materials fabricated by metal organic vapor deposition (MOCVD). The model of simulating gradient Indium content of InGaN used as transition interface between InN and GaN was investigated. The results exhibit utilizing the effective variation of Indium content and suitable thickness to approach the optimal characteristic of hybrid InN/InGaN structure within solar cells shall be anticipated to enhance the performance of current nitride-based solar cells.

原文English
主出版物標題39th IEEE Photovoltaic Specialists Conference, PVSC 2013
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2428-2431
頁數4
ISBN(列印)9781479932993
DOIs
出版狀態Published - 1 一月 2013
事件39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
持續時間: 16 六月 201321 六月 2013

出版系列

名字Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(列印)0160-8371

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
國家United States
城市Tampa, FL
期間16/06/1321/06/13

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