Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model

I. Polishchuk; Chen-Ming Hu

Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model

I. Polishchuk^*, Chen-Ming Hu

^*Corresponding author for this work

國際半導體產業學院

研究成果: Paper › 同行評審

15 引文斯高帕斯（Scopus）

摘要

A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Q_inv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO₂ to high-K gate dielectrics.

原文	English
頁面	51-52
頁數	2
出版狀態	Published - 1 一月 2001
事件	2001 VLSI Technology Symposium - Kyoto, Japan 持續時間: 12 六月 2001 → 14 六月 2001

Conference

Conference	2001 VLSI Technology Symposium
國家	Japan
城市	Kyoto
期間	12/06/01 → 14/06/01

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Link to publication in Scopus

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引用此

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AB - A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Qinv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO2 to high-K gate dielectrics.

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