Electron wavefunction penetration into gate dielectric and interface scattering - An alternative to surface roughness scattering model

I. Polishchuk*, Chen-Ming Hu

*Corresponding author for this work

研究成果: Paper

15 引文 斯高帕斯(Scopus)

摘要

A quantum mechanical (QM) simulator was used to determine the amount of carrier wavefunction penetration into gate dielectric. The amount of penetration affects the inversion charge density Qinv, inversion charge centroid, and most importantly carrier mobility. It is shown that interface scattering due to wavefunction penetration is in better agreement with the universal mobility data then the surface roughness scattering mechanism. The interface scattering allows the extension of the universal mobility model from SiO2 to high-K gate dielectrics.

原文English
頁面51-52
頁數2
出版狀態Published - 1 一月 2001
事件2001 VLSI Technology Symposium - Kyoto, Japan
持續時間: 12 六月 200114 六月 2001

Conference

Conference2001 VLSI Technology Symposium
國家Japan
城市Kyoto
期間12/06/0114/06/01

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