ELECTRON TRAPPING IN OXIDE GROWN FROM POLYCRYSTALLINE SILICON.

Chen-Ming Hu*, D. Y. Joh, Y. Shum, T. Klein

*Corresponding author for this work

研究成果: Paper同行評審

2 引文 斯高帕斯(Scopus)

摘要

This paper presents a method of characterizing the N- sigma (density - ″capture-cross-section″ ) distribution of electron traps in insulators. Requiring only voltage-time measurements made at constant currents, this method has found for oxides grown from poly-Si N reversible reaction sigma ** minus **1**. **1**6. The previously reported absence of saturation electron trapping in these oxides is explained by the high density of traps with small cross-sections. The trap density and cross-section are insensitive to the oxidation condition. The observed trapping characteristics is consistent with this density-cross-section distribution, first order rate dynamics of trapping, and unnoticeable new trap generation by field or current stressing under the test conditions.

原文English
頁面229-232
頁數4
出版狀態Published - 1 一月 1979
事件Int Electron Devices Meet, 25th, Tech Dig - Washington, DC, USA
持續時間: 3 十二月 19795 十二月 1979

Conference

ConferenceInt Electron Devices Meet, 25th, Tech Dig
城市Washington, DC, USA
期間3/12/795/12/79

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