Electron correlation effects in thick RuO 2 films at liquid helium temperatures

C. Y. Wu*, H. Y. Jian, S. M. Mar, Y. S. Huang, Juhn-Jong Lin

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)


We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

頁(從 - 到)784-787
期刊Chinese Journal of Physics
出版狀態Published - 1 六月 1996

指紋 深入研究「Electron correlation effects in thick RuO <sub>2</sub> films at liquid helium temperatures」主題。共同形成了獨特的指紋。