Electron correlation effects in thick RuO 2 films at liquid helium temperatures

C. Y. Wu*, H. Y. Jian, S. M. Mar, Y. S. Huang, Juhn-Jong Lin

*Corresponding author for this work

研究成果: Article

2 引文 斯高帕斯(Scopus)

摘要

We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

原文English
頁(從 - 到)784-787
頁數4
期刊Chinese Journal of Physics
34
發行號31
出版狀態Published - 1 六月 1996

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    Wu, C. Y., Jian, H. Y., Mar, S. M., Huang, Y. S., & Lin, J-J. (1996). Electron correlation effects in thick RuO 2 films at liquid helium temperatures. Chinese Journal of Physics, 34(31), 784-787.