摘要
We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.
原文 | English |
---|---|
頁(從 - 到) | 784-787 |
頁數 | 4 |
期刊 | Chinese Journal of Physics |
卷 | 34 |
發行號 | 31 |
出版狀態 | Published - 1 六月 1996 |