Electron correlation effects in thick RuO 2 films at liquid helium temperatures

C. Y. Wu; H. Y. Jian; S. M. Mar; Y. S. Huang; Juhn-Jong Lin

Electron correlation effects in thick RuO ₂ films at liquid helium temperatures

C. Y. Wu^*, H. Y. Jian, S. M. Mar, Y. S. Huang, Juhn-Jong Lin

^*Corresponding author for this work

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2 引文斯高帕斯（Scopus）

摘要

We have measured the resistivities p of two ≈ 3000-Å thick RuO ₂ films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

原文	English
頁（從 - 到）	784-787
頁數	4
期刊	Chinese Journal of Physics
卷	34
發行號	31
出版狀態	Published - 1 六月 1996

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title = "Electron correlation effects in thick RuO 2 films at liquid helium temperatures",

abstract = " We have measured the resistivities p of two ≈ 3000-{\AA} thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed. ",

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AU - Jian, H. Y.

AU - Mar, S. M.

AU - Huang, Y. S.

AU - Lin, Juhn-Jong

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Y1 - 1996/6/1

N2 - We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

AB - We have measured the resistivities p of two ≈ 3000-Å thick RuO 2 films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

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