### 摘要

We have measured the resistivities p of two ≈ 3000-Å thick RuO
_{2}
films between 0.3 and 10 K. As the temperature T is lowered below 10 K, a resistivity rise varying with the square root of temperature is observed. This ρ behavior with T is well ascribed to electron-electron interaction effects in a three-dimensional disordered metal. A quantitative comparison of the experiment with recent electron-structure calculations for this material is performed.

原文 | English |
---|---|

頁（從 - 到） | 784-787 |

頁數 | 4 |

期刊 | Chinese Journal of Physics |

卷 | 34 |

發行號 | 31 |

出版狀態 | Published - 1 六月 1996 |

## 指紋 深入研究「Electron correlation effects in thick RuO <sub>2</sub> films at liquid helium temperatures」主題。共同形成了獨特的指紋。

## 引用此

Wu, C. Y., Jian, H. Y., Mar, S. M., Huang, Y. S., & Lin, J-J. (1996). Electron correlation effects in thick RuO

_{2}films at liquid helium temperatures.*Chinese Journal of Physics*,*34*(31), 784-787.