Electromigration immortality of purely intermetallic micro -bump for 3D integration

Hsiao Yun Chen, Chih Hang Tung, Yi Li Hsiao, Jyun Lin Wu, Tung Ching Yeh, Larry Liang Chen Lin, Chih Chen, Douglas Cheng Hua Yu

研究成果: Conference contribution同行評審

13 引文 斯高帕斯(Scopus)

摘要

The progress of three-dimensional integrated circuit (3D IC) micro-bump joining technology has led to an increased volume fraction of intermetallics (IMC) in the post reflow joints, to an extent that a solder micro-bump may consist almost entirely of IMCs. Therefore, the current carrying capability and electromigration (EM) life time of the purely IMC micro-joint needs to be understood as functions of stressing conditions and degradation mechanisms. Superior EM performance and robustness of IMC joints is demonstrated with no resistance fluctuation under ultra-high stressing condition for over 9000 hrs while solder micro-bumps led to an open failure within 500 hrs. At least an order of magnitude greater current carrying capability of IMC micro-joint compared with solder micro-joint is observed experimentally. The observed degradation mechanism is void formation within Al trace rather than damage inside IMC joint. IMC joint is not the EM reliability bottle neck of the test circuit.

原文English
主出版物標題2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面620-625
頁數6
ISBN(電子)9781479986095
DOIs
出版狀態Published - 15 七月 2015
事件2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 - San Diego, United States
持續時間: 26 五月 201529 五月 2015

出版系列

名字Proceedings - Electronic Components and Technology Conference
2015-July
ISSN(列印)0569-5503

Conference

Conference2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
國家United States
城市San Diego
期間26/05/1529/05/15

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