Electrically sign-reversible transverse g -factors of holes in droplet epitaxial GaAs/AlGaAs quantum dots under uniaxial stress

Yu Nien Wu, Ming Fan Wu, Ya Wen Ou, Ying Lin Chou, Shun-Jen Cheng*

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We present a theoretical investigation of anisotropic g-factor tensors of single holes confined in droplet epitaxial GaAs/AlGaAs quantum dots under electrical and mechanical controls using the gauge-invariant discretization method within the framework of four-band Luttinger-Kohn k - ·p - theory. We reveal an intrinsic obstacle to realize the electrical sign reversal of the hole g-factors, being a key condition required for a full spin control in the scheme of g-tensor modulation, for the quantum dots solely with electrical bias control. Constructively, our studies show that, besides electrical gating, slightly stressing an inherently unstrained droplet epitaxial GaAs/AlGaAs quantum dot can offset the transverse hole g-factor to be nearly zero and make the electrical sign reversal of the hole g-factors feasible.

原文English
文章編號085309
期刊Physical Review B
96
發行號8
DOIs
出版狀態Published - 23 八月 2017

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