Electrically injected 1.3-μm quantum-dot photonic-crystal surface-emitting lasers

Ming Yang Hsu, Kuo-Jui Lin*, Chien Hung Pan

*Corresponding author for this work

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

We have fabricated electrically injected InAs/InGaAs/GaAs quantum-dot (QD) photonic-crystal (PC) surface-emitting lasers (SELs) and successfully demonstrated room-temperature lasing emissions at 1.3-μm wavelength for the first time. The PCSEL device fabrication was greatly simplified by deposition of transparent conducting layer of indium-tin-oxide over “PC slab-on-substrate” structure. The threshold current density per QD layer was as low as 50 A/cm2/layer; however, the optical output was limited to 2 mW. The band-edge lasing mode was identified and near-circular beam with narrow divergence angle less than 2° was achieved.

原文English
頁(從 - 到)32697-32704
頁數8
期刊Optics Express
25
發行號26
DOIs
出版狀態Published - 25 十二月 2017

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