Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation

Banani Sen*, B. L. Yang, H. Wong, C. W. Kok, M. K. Bera, P. K. Chu, A. Huang, K. Kakushima, H. Iwai

*Corresponding author for this work

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

The effect of nitrogen implantation on thin lanthanum oxide (La 2O3) films grown by e-beam evaporation are investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by Plasma Immersion Ion-Implantation (PII) is found to be quite low (about 3% near the surface). However, the introduction of nitrogen atoms into the La2O3 network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面637-640
頁數4
DOIs
出版狀態Published - 2007
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 20 十二月 200722 十二月 2007

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家Taiwan
城市Tainan
期間20/12/0722/12/07

指紋 深入研究「Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation」主題。共同形成了獨特的指紋。

  • 引用此

    Sen, B., Yang, B. L., Wong, H., Kok, C. W., Bera, M. K., Chu, P. K., Huang, A., Kakushima, K., & Iwai, H. (2007). Electrical stability improvement for lanthanum oxide films by nitrogen incorporation using plasma immersion ion implantation. 於 IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 (頁 637-640). [4450205] (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007). https://doi.org/10.1109/EDSSC.2007.4450205