Electrical reliability issues of integrating low-K dielectrics with Cu metallization

Z. C. Wu, Z. W. Shiung, C. C. Wang, K. L. Fang, R. G. Wu, Y. L. Liu, Bing-Yue Tsui, M. C. Chen, W. Chang, P. F. Chou, S. M. Jang, C. H. Yu, M. S. Liang

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 ∼ 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.

原文English
主出版物標題Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000
發行者Institute of Electrical and Electronics Engineers Inc.
頁面82-84
頁數3
ISBN(電子)0780363272, 9780780363274
DOIs
出版狀態Published - 1 一月 2000
事件3rd IEEE International Interconnect Technology Conference, IITC 2000 - Burlingame, United States
持續時間: 5 六月 20007 六月 2000

出版系列

名字Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Conference

Conference3rd IEEE International Interconnect Technology Conference, IITC 2000
國家United States
城市Burlingame
期間5/06/007/06/00

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