Electrical investigation of Cu pumping in through-silicon vias for BEOL reliability in 3D integration

Chuan An Cheng, Ryuichi Sugie, Tomoyuki Uchida, Kou Hua Chen, Chi Tsung Chiu, Kuan-Neng Chen*

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

It is crucial for Cu TSV to be reliable at the back-end-of-line (BEOL) procedure particularly at high temperature process step. Any unreliable Cu TSV may cause residual from thermal stress due to the mismatch of the coefficient of thermal expansion. Therefore, it is important to investigate on the behavior of Cu pumping whether it will affect the electrical performance in BEOL integration. Two sets of Cu pumping with pitch 30 μm and 40 μm were annealed to measure their resistance at the temperature lower than 250°C. Based on the results, the narrow pitch of 30μm can be applied in post via last process below 250°C for BEOL procedure in 3D integration.

原文English
主出版物標題2015 International 3D Systems Integration Conference, 3DIC 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面TS8.12.1-TS8.12.4
ISBN(電子)9781467393850
DOIs
出版狀態Published - 20 十一月 2015
事件International 3D Systems Integration Conference, 3DIC 2015 - Sendai, Japan
持續時間: 31 八月 20152 九月 2015

出版系列

名字2015 International 3D Systems Integration Conference, 3DIC 2015

Conference

ConferenceInternational 3D Systems Integration Conference, 3DIC 2015
國家Japan
城市Sendai
期間31/08/152/09/15

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