Electrical characterization and Raman spectroscopy of individual vanadium pentoxide nanowire

W. J. Shen, Kien-Wen Sun*, Chi-Shen Lee

*Corresponding author for this work

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We measured I-V characteristics, electrical resistance, and Raman spectra in the temperature range from room temperature to above 600 K to obtain nanodevices. Measurements were taken on a single V2O5 nanowire deposited on a Si template, where two- and four-point metallic contacts were previously made using e-beam lithography. In both two- and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V2O5 to VO 2/V2O3 phases took place at a temperature as low as 500 K, when electrons were injected to the nanowire through electrical contacts.

原文English
頁(從 - 到)4929-4936
頁數8
期刊Journal of Nanoparticle Research
13
發行號10
DOIs
出版狀態Published - 1 十月 2011

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