Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

Kow-Ming Chang; Wen Chih Yang; Chiu Pao Tsai

doi:10.1109/LED.2003.815155

Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

Kow-Ming Chang^*, Wen Chih Yang, Chiu Pao Tsai

^*Corresponding author for this work

國立交通大學

研究成果: Article › 同行評審

42 引文斯高帕斯（Scopus）

摘要

This investigation is the first to demonstrate a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N₂O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide LTPS TFTs is over 4 times than that of traditional TEOS oxide LTPS TFTs. These improvements are attributed to the high quality N₂O-plasma grown ultrathin oxynitride forming strong Si ≡ N bonds, as well as to reduce the trap density in the oxynitride/poly-Si interface.

原文	English
頁（從 - 到）	512-514
頁數	3
期刊	IEEE Electron Device Letters
卷	24
發行號	8
DOIs	https://doi.org/10.1109/LED.2003.815155
出版狀態	Published - 1 八月 2003

存取文件

10.1109/LED.2003.815155

其它文件與鏈接

Link to publication in Scopus

指紋深入研究「Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric」主題。共同形成了獨特的指紋。

引用此

@article{035d2fff94b344a5b600d129fdafb9e1,

title = "Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric",

abstract = "This investigation is the first to demonstrate a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide LTPS TFTs is over 4 times than that of traditional TEOS oxide LTPS TFTs. These improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si ≡ N bonds, as well as to reduce the trap density in the oxynitride/poly-Si interface.",

keywords = "NO-plasma oxynitride, Stack oxide, Thin film transistors (TFTs)",

author = "Kow-Ming Chang and Yang, {Wen Chih} and Tsai, {Chiu Pao}",

year = "2003",

month = aug,

day = "1",

doi = "10.1109/LED.2003.815155",

language = "English",

volume = "24",

pages = "512--514",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

AU - Chang, Kow-Ming

AU - Yang, Wen Chih

AU - Tsai, Chiu Pao

PY - 2003/8/1

Y1 - 2003/8/1

N2 - This investigation is the first to demonstrate a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide LTPS TFTs is over 4 times than that of traditional TEOS oxide LTPS TFTs. These improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si ≡ N bonds, as well as to reduce the trap density in the oxynitride/poly-Si interface.

AB - This investigation is the first to demonstrate a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide LTPS TFTs is over 4 times than that of traditional TEOS oxide LTPS TFTs. These improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si ≡ N bonds, as well as to reduce the trap density in the oxynitride/poly-Si interface.

KW - NO-plasma oxynitride

KW - Stack oxide

KW - Thin film transistors (TFTs)

UR - http://www.scopus.com/inward/record.url?scp=0041886628&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.815155

DO - 10.1109/LED.2003.815155

M3 - Article

AN - SCOPUS:0041886628

VL - 24

SP - 512

EP - 514

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -