Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric

Kow-Ming Chang*, Wen Chih Yang, Chiu Pao Tsai

*Corresponding author for this work

研究成果: Article同行評審

42 引文 斯高帕斯(Scopus)

摘要

This investigation is the first to demonstrate a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide LTPS TFTs is over 4 times than that of traditional TEOS oxide LTPS TFTs. These improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si ≡ N bonds, as well as to reduce the trap density in the oxynitride/poly-Si interface.

原文English
頁(從 - 到)512-514
頁數3
期刊IEEE Electron Device Letters
24
發行號8
DOIs
出版狀態Published - 1 八月 2003

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