InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.
|主出版物標題||ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7|
|出版狀態||Published - 1 十二月 2009|
|事件||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria|
持續時間: 5 十月 2009 → 7 十月 2009
|Conference||7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society|
|期間||5/10/09 → 7/10/09|