Electrical characteristics of HfO2 and La2O 3 gate dielectrics for In0.53Ga0.47As MOS structure

K. Funamizu*, Y. C. Lin, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, E. Y. Chang, T. Hattori, H. Iwai

*Corresponding author for this work

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.

原文English
主出版物標題ECS Transactions - Physics and Technology of High-k Gate Dielectrics 7
頁面265-270
頁數6
版本6
DOIs
出版狀態Published - 1 十二月 2009
事件7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society - Vienna, Austria
持續時間: 5 十月 20097 十月 2009

出版系列

名字ECS Transactions
號碼6
25
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference7th International Symposium on High Dielectric Constant Materials and Gate Stacks - 216th Meeting of the Electrochemical Society
國家Austria
城市Vienna
期間5/10/097/10/09

指紋 深入研究「Electrical characteristics of HfO<sub>2</sub> and La<sub>2</sub>O <sub>3</sub> gate dielectrics for In<sub>0.53</sub>Ga<sub>0.47</sub>As MOS structure」主題。共同形成了獨特的指紋。

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