Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

Xiongfei Yu, Chunxiang Zhu*, M. F. Li, Albert Chin, A. Y. Du, W. D. Wang, Dim Lee Kwong

*Corresponding author for this work

研究成果: Article同行評審

49 引文 斯高帕斯(Scopus)

摘要

The investigation of the thermal stability and electrical characteristics of HfTaO gate dielectric with polycrystalline-silicon gate was discussed. It was shown that the incorporation of Ta into HfO 2 enhances the crystallization temperature of film dramatically. It was confirmed by transmission electron micrographs that HfTaO with 43% Ta film remains amorphous even after activation annealing at 950°C for 30 s and the formation of low-k interfacial layer was observably reduced. It was shown that the capacitance-voltage curve of metal-oxide-semiconductor capacitor fits well with simulated curve, indicating good interface property between HfTaO and substrate, by using HfTaO gate dielectric.

原文English
頁(從 - 到)2893-2895
頁數3
期刊Applied Physics Letters
85
發行號14
DOIs
出版狀態Published - 4 十月 2004

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