Electrical and material stability of Orion™ CVD ultra low-k dielectric film for copper interconnection

Kuo Lung Fang, Bing-Yue Tsui, Chen Chi Yang, Mao Chieh Chen, Shyh Dar Lee, K. Beekmann, T. Wilby, K. Giles, S. Ishaq

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The electrical and material stability of a newly developed CVD ultra low-k dielectric material called Orion, is explored. It has a dielectric constant of less than 2.2 with excellent thermal stability up to 600°C. It shows very low leakage current of only 1 nA/cm2 at 2.5 MV/cm. Although both Al and Cu ions can be driven into Orion easily, no metal ions are observed in the Orion with a TaN gate. The Orion material also shows very good adhesion with TaN and oxide hardmask. The current transport mechanism and electrical reliability were investigated. Although weak dielectric polarization occurs under bias-temperature stress, Orion is a very promising material for next generation Cu-interconnect technology.

原文English
主出版物標題Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002
發行者Institute of Electrical and Electronics Engineers Inc.
頁面60-62
頁數3
ISBN(電子)0780372166, 9780780372160
DOIs
出版狀態Published - 1 一月 2002
事件IEEE International Interconnect Technology Conference, IITC 2002 - Burlingame, United States
持續時間: 3 六月 20025 六月 2002

出版系列

名字Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Conference

ConferenceIEEE International Interconnect Technology Conference, IITC 2002
國家United States
城市Burlingame
期間3/06/025/06/02

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    Fang, K. L., Tsui, B-Y., Yang, C. C., Chen, M. C., Lee, S. D., Beekmann, K., Wilby, T., Giles, K., & Ishaq, S. (2002). Electrical and material stability of Orion™ CVD ultra low-k dielectric film for copper interconnection. 於 Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002 (頁 60-62). [1014887] (Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IITC.2002.1014887