Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer

Wei Chih Lai, Ya Yu Yang, Ray-Hua Horng

研究成果: Article同行評審

摘要

The thick-well InGaN/GaN short period multiple quantum well solar cells (SCs) with H2 in the GaN cap layer exhibits an improved open-circuit voltage, fill factor, and conversion efficiency η compared with those of SCs without the ramped H2 in the GaN cap layer. The η of the SC with the ramped H2 in the GaN cap layer (0.77%) shows a 67.4% improvement compared with that of the SC without the ramped H2 (0.46%). Furthermore, the η of SC with patterned sapphire substrate (PSS) (1.36%) indicates a 76.6% improvement compared with that of SC without PSS (0.77%).

原文English
文章編號6542659
頁(從 - 到)953-956
頁數4
期刊IEEE/OSA Journal of Display Technology
9
發行號12
DOIs
出版狀態Published - 2 十二月 2013

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