Efficiency enhancement of gaas photovoltaics employing antireflective indium tin oxide nanocolumns

Pei-Chen Yu*, Chia Hua Chang, Ching Hua Chiu, Chin Sheng Yang, Jue Chin Yu, Hao-Chung Kuo, Shih Hsin Hsu, Yia Chung Chang

*Corresponding author for this work

研究成果: Article同行評審

161 引文 斯高帕斯(Scopus)

摘要

A study was conducted to demonstrate the application of indium tin oxide (ITO) nanocolumns as a conductive antireflection (AR) coating layer for GaAs solar cells. Characteristic ITO nanocolumns, prepared by glancing-angle deposition with an incident nitrogen flux offered omni-directional and broad-band AR properties for both s- and p-polarizations. Calculations based on a rigorous coupled-wave analysis (RCWA) method indicated that the superior AR characteristics arose from the tapered column profiles, which collectively functioned as a graded-refractive-index layer. It was observed that the conversion efficiency of the GaAs solar cell with the nanocolumn AR layer increases by 28% as compared to a cell without any AR treatment. It was also observed that around 42% enhancement was achieved for photocurrents generated at wavelengths that were transparent to the window layer.

原文English
頁(從 - 到)1618-1621
頁數4
期刊Advanced Materials
21
發行號16
DOIs
出版狀態Published - 27 四月 2009

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