Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots

Yu An Liao, Wei Ting Hsu, Pei Chin Chiu, Jen Inn Chyi, Wen-Hao Chang*

*Corresponding author for this work

研究成果: Article同行評審

38 引文 斯高帕斯(Scopus)

摘要

We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-x Sbx layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.

原文English
文章編號053101
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
94
發行號5
DOIs
出版狀態Published - 2 二月 2009

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