Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics

Cheng I. Lin*, Asif Islam Khan, Sayeef Salahuddin, Chen-Ming Hu

*Corresponding author for this work

研究成果: Article同行評審

85 引文 斯高帕斯(Scopus)

摘要

We study the effects of the variation of ferroelectric material properties (thickness, polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs). Based on this, we propose the concept of conservative design of NCFETs, where any unintentional yet reasonable and simultaneous variation ( ∼ 3%) in ferroelectric parameters does not result in the emergence of hysteresis and causes only a reasonable variation in the ON-current (≤5%) and, within these constraints, the enhancement of ON-current due to the addition of the ferroelectric gate oxide, which is is maximized.

原文English
文章編號7386627
頁(從 - 到)2197-2199
頁數3
期刊IEEE Transactions on Electron Devices
63
發行號5
DOIs
出版狀態Published - 1 五月 2016

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