TY - JOUR
T1 - Effects of substrate orientation, pseudomorphic growth and superlattice on alloy scattering in modulation doped GaInAs
AU - Chin, Albert
AU - Chang, T. Y.
AU - Ourmazd, A.
AU - Monberg, E. M.
AU - Chang, A. M.
AU - Kurdak, C.
PY - 1991/5/2
Y1 - 1991/5/2
N2 - The possibility of reducing alloy scattering in MBE Ga1-xInxAs has been studied experimentally by growing modulation doped heterostructures (A) with an InAs/GaInAs superlattice 2DEG channel, (B) on a vicinal (110) InP substrate, and (C) with a strain compensated pseudomorphic channel. The maximum 77 K mobility obtained in each case is (A) 60,600, (B) 69,300, and (C) 123,100 cm2/V⋯s, using x=0.50, 0.53, and 0.80, respectively. Partial alloy ordering is observed in case (B). Cyclotron resonance measurements indicate that the reduction of m* contributes much less to the enhancement of mobility in case (C) than the alloy composition factor x(1-x). Alloy ordering may also be important.
AB - The possibility of reducing alloy scattering in MBE Ga1-xInxAs has been studied experimentally by growing modulation doped heterostructures (A) with an InAs/GaInAs superlattice 2DEG channel, (B) on a vicinal (110) InP substrate, and (C) with a strain compensated pseudomorphic channel. The maximum 77 K mobility obtained in each case is (A) 60,600, (B) 69,300, and (C) 123,100 cm2/V⋯s, using x=0.50, 0.53, and 0.80, respectively. Partial alloy ordering is observed in case (B). Cyclotron resonance measurements indicate that the reduction of m* contributes much less to the enhancement of mobility in case (C) than the alloy composition factor x(1-x). Alloy ordering may also be important.
UR - http://www.scopus.com/inward/record.url?scp=0026413371&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(91)91021-2
DO - 10.1016/0022-0248(91)91021-2
M3 - Article
AN - SCOPUS:0026413371
VL - 111
SP - 466
EP - 469
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -