Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Effects of poly-gate doping concentration on plasma charging damage in ultrathin gate oxides were investigated. While the charge-to-breakdown (Q bd ) value under gate injection stress polarity (-V g ) is independent of the doping concentration, Q bd under substrate injection stress polarity (+V g ) shows a noticeable improvement with increasing doping concentration. However, our results show that plasma-induced oxide degradation is actually aggravated with increasing poly-gate doping concentration. These seemingly inconsistent observations can be explained by the lowering of plasma charging potential in the case of insufficient poly-gate doping.

原文English
頁(從 - 到)103-105
頁數3
期刊Electrochemical and Solid-State Letters
3
發行號2
DOIs
出版狀態Published - 1 二月 2000

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