Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics

Chih Yi Liu*, Hang Ting Lue, Tseung-Yuen Tseng

*Corresponding author for this work

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 (STO) gate dielectrics were studied. The repeated spike heating technique was also used to deposit a STO gate dielectric at repeated oscillating temperatures. The results indicate that this thermal treatment reduced the interfacial trap states and the leakage current is also reduced by about 1 order of magnitude.

原文English
頁(從 - 到)4416-4418
頁數3
期刊Applied Physics Letters
81
發行號23
DOIs
出版狀態Published - 2 十二月 2002

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