Effects of low tempersture NH3 treatment on HfO2/SiO2 stack gate dielectrics fabricated by MOCVD system

Wen Tai Lu*, Chao-Hsin Chien, Ying Chang Lin, Ming Jui Yang, Tiao Yuan Huang

*Corresponding author for this work

研究成果: Paper同行評審

摘要

The effects of post-deposition low temperature (∼ 400°C) NH 3 (LTN) treatment on the characteristics of HfO2/SiO 2 gate stack with TiN gate electrode were studied in this work. HfO2 films were deposited using AIXTRON Tricent® MOCVD system. Subsequently, the LTN treatment was implemented prior to post-deposition annealing (PDA) in order to avoid the growth of additional interfacial layer frequently seen as the high temperature nitridation technique is used. The effective electrical oxide thickness (EOT) for the annealed devices at 700°C with and without LTN was estimated to be about 2.2 nm and 2.3 nm without considering Quantum effect. It was found that the low temperature NH3 treatment can not only effectively improve the characteristics of HfO 2/SiO2 stack gate dielectrics, such as C-V characteristics, frequency dispersion, trap generation rate, and dielectric breakdown voltage even at higher PDA temperature (∼ 700°C), but also reduce the resultant EOT.

原文English
頁面434-442
頁數9
出版狀態Published - 1 十二月 2004
事件Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium - Honolulu, HI, United States
持續時間: 3 十月 20048 十月 2004

Conference

ConferenceDielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium
國家United States
城市Honolulu, HI
期間3/10/048/10/04

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