Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based light-emitting diodes

Yew-Chuhg Wu*, Ji Hao Cheng, Wei Chih Peng, Hao Ouyang

*Corresponding author for this work

研究成果: Article同行評審

51 引文 斯高帕斯(Scopus)

摘要

The KrF pulsed excimer laser (248 nm) and the frequency-tripled neodymium doped yttrium aluminum garnet laser (355 nm) have been used to separate GaN thin films from, sapphire substrates and transfer to bond other substrate. However, these processes would increase the dislocation density, resulting in an increase of the leakage current. In this study, the effects of these two laser sources on the reverse-bias leakages of InGaN-GaN light-emitting diodes were studied.

原文English
文章編號251110
期刊Applied Physics Letters
90
發行號25
DOIs
出版狀態Published - 2 八月 2007

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