Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2 O9/HfO2/Si structure

Ching Chich Leu*, Chen Han Lin, Chao-Hsin Chien, Ming Jui Yang

*Corresponding author for this work

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We investigated structural and characteristic changes in thin HfO2 films (<10 nm) by varying their thicknesses and also examined their influence on the properties of Pt/SrBi2 Ta2O9/Hfo2/Si metal/ feffoelectric/insulator/semiconductor (MFIS) structures. HfO2 films with different thicknesses were found to exhibit rather distinct characteristics and to profoundly affect the properties of the fabricated MFIS capacitor. We found that, when employing 3.2-nm-thick HfO2 as the buffer layer, the MFIS capacitor showed good memory performance at low operation voltage. However, this study demonstrated that some of the HfO2 limited its application in MFIS memory, even though it is the most promising alternative gate dielectric material.

原文English
頁(從 - 到)2023-2032
頁數10
期刊Journal of Materials Research
23
發行號7
DOIs
出版狀態Published - 1 七月 2008

指紋 深入研究「Effects of HfO<sub>2</sub> buffer layer thickness on the properties of Pt/SrBi<sub>2</sub>Ta<sub>2</sub> O<sub>9</sub>/HfO<sub>2</sub>/Si structure」主題。共同形成了獨特的指紋。

引用此