Effects of doping in the active region of 630-nm band GaInP-AlGaInP tensile-strained quantum-well lasers

Shun-Tung Yen*, Chien Ping Lee

*Corresponding author for this work

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

We theoretically analyze 630-nm band GaInP-AIGaInP tensile-strained quantum-well (QW) lasers with doping in the active region. The radiative current can be significantly reduced by introducing n-type doping in the active region. However, this advantage is reduced by the increase of the leakage current. As a result, the threshold current is reduced and the emission wavelength is shortened for mulliquantum-well (MQW) lasers by n-type doping. But for Single-quantum-well (SQW) lasers, because of the large increase of the leakage current, the threshold current increases with n-type doping.

原文English
頁(從 - 到)1644-1651
頁數8
期刊IEEE Journal of Quantum Electronics
34
發行號9
DOIs
出版狀態Published - 1 九月 1998

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