Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

Wei-I Lee*, T. C. Huang, J. D. Guo, M. S. Feng

*Corresponding author for this work

研究成果: Article同行評審

111 引文 斯高帕斯(Scopus)

摘要

Two different kinds of n-type GaN films were prepared by organometallic vapor phase epitaxy, one by using trimethylgallium (TMGa) and another by using triethylgallium (TEGa) as the alkyl source. Schottky diodes with well-behaved current-voltage and capacitance-voltage characteristics were fabricated. Deep-level transient spectroscopy studies were performed on these samples. Three distinct deep levels, labeled E1, E2, and E3, were measured in the film grown with TMGa, with an activation energy of 0.14, 0.49, and 1.63±0.3 eV, respectively. Only one level, E3, was observed in the film prepared with TEGa.

原文English
頁數1
期刊Applied Physics Letters
67
DOIs
出版狀態Published - 1 十二月 1995

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