Effects of boron penetration and resultant limitations in ultra thin pure-oxide and nitrided-oxide gate-films

Toyota Morimoto*, Hisayo Sasaki Momose, Yoshio Ozawa, Kikuo Yamabe, Hiroshi Iwai

*Corresponding author for this work

研究成果: Conference article同行評審

59 引文 斯高帕斯(Scopus)

摘要

The boron penetration effect was compared for p+ poly gate PMOSFETs with pure oxide gates and nitrided oxide gates. For a gate thickness of 6.5 nm, reduced boron dosage and rapid thermal processing solve the problem of boron penetration in the pure oxide case. However, when the film thickness is less than 6.5 nm, only a nitrided oxide film can solve the problem. From the results of EDX analysis in nitrided oxide films, it was found that nitrogen build-up at the interface is small and that a nitrogen concentration of only a few percent leads to complete suppression of boron penetration down to the 2 nm range of film thickness. Excellent characteristics in 2.6 nm nitrided oxide gate p-MOSFETs, free from boron penetration effects, were demonstrated.

原文English
頁(從 - 到)429-432
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 十二月 1990
事件1990 International Electron Devices Meeting - San Francisco, CA, USA
持續時間: 9 十二月 199012 十二月 1990

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