Effectiveness of Si seed for selective SiGe epitaxial deposition in recessed source and drain for locally strained pMOS application

Po Lun Cheng*, Chin I. Liao, Hou Ren Wu, Yi G. Chen, Chin Cheng Chien, Chan Lon Yang, S. F. Tzou, Jinsong Tang, Yonah Cho, Errol Sanchez, Vincent C. Chang, Tony Fu, Wen-Syang Hsu

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

A thin layer of Si seed was employed to help nucleate low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface. copyright The Electrochemical Society.

原文English
頁(從 - 到)245-248
頁數4
期刊ECS Transactions
3
發行號7
DOIs
出版狀態Published - 1 十二月 2006
事件SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
持續時間: 29 十月 20063 十一月 2006

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