A thin layer of Si seed was employed to help nucleate low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved dislocation on the lateral recessed interface. copyright The Electrochemical Society.
|頁（從 - 到）||245-248|
|出版狀態||Published - 1 十二月 2006|
|事件||SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico|
持續時間: 29 十月 2006 → 3 十一月 2006