Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)

Ting Chang, Yi Shien Mor, Po-Tsun Liu, Tsung Ming Tsai, Chi Wen Chen, Yu Jen Mei, Simon M. Sze

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Wet stripper is commonly used to remove photoresist in IC integration processing. However, the high alkalinity of the wet stripper solution often leads to the hydrolysis of hydrogen silsesquioxane (HSQ) film and induces water uptake. As a result, both the leakage current and dielectric constant of HSQ increase. In this study, NH3 plasma treatment was applied to the HSQ film to form a thin nitrogen-containing layer on the HSQ surface and prevents the hydrolysis of HSQ during photoresist stripping. Dielectric degradation can be prevented by NH3 plasma treatment.

原文English
頁(從 - 到)L1311-L1313
期刊Japanese Journal of Applied Physics, Part 2: Letters
40
發行號12 A
DOIs
出版狀態Published - 1 十二月 2001

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