Effect of thermal treatment on physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics

Yu Min Chang, Wei Yuan Chang, Jun Fu Huang, Leu-Jih Perng, Yi Lung Cheng*

*Corresponding author for this work

研究成果: Article

13 引文 斯高帕斯(Scopus)

摘要

The effects of thermal annealing on the physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectrics prepared by plasma-enhanced chemical vapor deposition (PECVD) are investigated. The porogen-free low-k dielectrics are obtained by using UV curing process to removal organic sacrificial phase and to generate open porosity. The results are compared with PECVD porogen-containing low-k films fabricated without UV curing process and PECVD low-k dielectrics deposited without organic sacrificial phase. The experimental results show that all low-k films remained stable after they were experimentally heating to temperatures up to 700 °C. The non-porous low-k films also showed the highest reliability. Although the porous-free low-k film requires an additional UV curing process, the heat stress confirmed that its thermal stability was better than that of the porogen-containing low-k film. At an annealing temperature above 500 C, the heating process is comparable to UV curing, but does not provide SiOSi cross-linking within the film. At an annealing of 600 °C, the porogen-free low-k films have a relatively higher breakdown electric-field and longer failure time in comparison to the porogen-containing low-k films. However, pores generated in porogen-containing low-k films at high temperature cause reliability to degrade with annealing temperature. Crown

原文English
頁(從 - 到)67-71
頁數5
期刊Thin Solid Films
528
DOIs
出版狀態Published - 15 一月 2013

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