Effect of the flat and pattern surface texturing on light extraction of GaN flip-chip light-emitting diodes

Ray-Hua Horng, Z. W. Liao, Y. L. Tsai, H. L. Hu, Y. J. Tsai, C. P. Hsu, M. T. Chu

研究成果: Conference contribution同行評審

摘要

Device performances of GaN-based flip-chip light-emitting diodes (FC LEDs) with planar and patterned sapphire substrates (PSS) were compared in this study. It was found that for the FC LED with planar sapphire, enhancement factor of luminous intensity can be raised to 107.5% after the processes of substrate removal and surface roughening. By contrast, for the FC LED with PSS, the intensity enhancement factor is already up to 169.5% without any post-processes as compared with the intensity of an as-fabricated conventional FC LED. Further intensity improvement to 205.1% can be achieved for the FC LED with PSS by employing subsequent processes such as substrate removal and surface roughening. These results indicate that the PSS approach is useful in improving light extraction of a nitride-based FC LED.

原文English
主出版物標題ECS Transactions - State-of-the-Art Program on Compound Semiconductors 50 (SOTAPOCS 50)and Processes at the Semiconductor Solution Interface 3
頁面65-69
頁數5
版本3
DOIs
出版狀態Published - 1 十二月 2009
事件50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting - San Francisco, CA, United States
持續時間: 24 五月 200929 五月 2009

出版系列

名字ECS Transactions
號碼3
19
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference50th State-of-the-Art Symposium on Compound Semiconductors, SOTAPOCS 50 and 3rd International Symposium on Processes at the Semiconductor-Solution Interface, PSSI 3 - 215th ECS Meeting
國家United States
城市San Francisco, CA
期間24/05/0929/05/09

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