Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing

J. Y. Fang*, M. S. Tsai, B. T. Dai, Yew-Chuhg Wu, M. S. Feng

*Corresponding author for this work

研究成果: Article

6 引文 斯高帕斯(Scopus)

摘要

Selective removal of surface passivation on protruded Cu film is a critical factor of Cu planarization. For a stress-free Cu abrasive-free polishing (Cu AFP) process, due to the lack of mechanical abrasion by abrasives, a polishing pad is used instead of abrasives to remove surface passivation during Cu planarization. Thus, the planarization efficiency in Cu AFP relates to the efficiency of surface passivation removed by a pad. Comparing Cu oxides with a non-native Cu-BTA (Cu-Benzotriazole) monolayer used as surface passivation, this study found that an oxide-free Cu surface should be required in Cu AFP. When Cu oxides function as surface passivation in Cu AFP, they are removed with greater difficulty by a pad resulting in low planarization efficiency. Contrary to Cu oxides, high planarization efficiency can be obtained with non-native Cu-BTA as surface passivation in Cu AFP.

原文English
期刊Journal of the Electrochemical Society
153
發行號1
DOIs
出版狀態Published - 10 四月 2006

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