A model for remote surface roughness scattering (RSR)-limited electron mobility in the inversion layer of nMOSFETs with high-k dielectrics has been developed in this work. A numerical method is applied to calculate RSR-limited electron mobility. It has been demonstrated that the RSR-limited electron mobility is highly degraded in the high electric field region.
|主出版物標題||Physics and Technology of High-k Materials 8|
|出版狀態||Published - 2010|
|事件||8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States|
持續時間: 11 十月 2010 → 15 十月 2010
|Conference||8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting|
|城市||Las Vegas, NV|
|期間||11/10/10 → 15/10/10|