Effect of remote-surface-roughness scattering on electron mobility in MOSFETs with high-k dielectrics

M. Mamatrishat*, M. Kouda, T. Kawanago, K. Kakushima, P. Ahmet, A. Aierken, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, H. Iwai

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

A model for remote surface roughness scattering (RSR)-limited electron mobility in the inversion layer of nMOSFETs with high-k dielectrics has been developed in this work. A numerical method is applied to calculate RSR-limited electron mobility. It has been demonstrated that the RSR-limited electron mobility is highly degraded in the high electric field region.

原文English
主出版物標題Physics and Technology of High-k Materials 8
頁面249-255
頁數7
版本3
DOIs
出版狀態Published - 2010
事件8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
持續時間: 11 十月 201015 十月 2010

出版系列

名字ECS Transactions
號碼3
33
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
國家United States
城市Las Vegas, NV
期間11/10/1015/10/10

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