TY - JOUR
T1 - Effect of passivation layer on InGaZnO thin-film transistors with hybrid silver nanowires as source and drain electrodes
AU - Yu, Chien Hsien
AU - Wu, Hung Chi
AU - Chien, Chao-Hsin
PY - 2015/8/1
Y1 - 2015/8/1
N2 - InGaZnO (IGZO) thin-film transistors (TFTs) with hybrid silver nanowires (hybrid-AgNWs) as the source and drain electrodes exhibit superior performance according to the on/off current ratio (≈106), subthreshold swing (SS) (367mV/decade), and mobility (15.6cm2V-1 s-1). The transfer and output characteristics of nanowire-based electrodes are comparable with those of titanium electrodes. The devices are fabricated on a plastic substrate and are highly transparent (>70%) and flexible. The device performance is severely degraded during operation in air, especially under high humidity conditions, and progressive deterioration resulting from water molecule diffusion leads to a high current density when the device is swept. Hence, introducing a passivation layer on the hybrid-AgNW electrodes is imperative.
AB - InGaZnO (IGZO) thin-film transistors (TFTs) with hybrid silver nanowires (hybrid-AgNWs) as the source and drain electrodes exhibit superior performance according to the on/off current ratio (≈106), subthreshold swing (SS) (367mV/decade), and mobility (15.6cm2V-1 s-1). The transfer and output characteristics of nanowire-based electrodes are comparable with those of titanium electrodes. The devices are fabricated on a plastic substrate and are highly transparent (>70%) and flexible. The device performance is severely degraded during operation in air, especially under high humidity conditions, and progressive deterioration resulting from water molecule diffusion leads to a high current density when the device is swept. Hence, introducing a passivation layer on the hybrid-AgNW electrodes is imperative.
UR - http://www.scopus.com/inward/record.url?scp=84938387457&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.081101
DO - 10.7567/JJAP.54.081101
M3 - Article
AN - SCOPUS:84938387457
VL - 54
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 8
M1 - 081101
ER -