Effect of nickel concentration on bias reliability and thermal stability of thin-film transistors fabricated by Ni-metal-induced crystallization

Ming Hui Lai*, Yew-Chuhg Wu, Jung Jie Huang

*Corresponding author for this work

研究成果: Article

摘要

Ni-metal-induced crystallization (MIC) of amorphous Si (α-Si) has been employed to fabricate low-temperature polycrystalline silicon (poly-Si) thinfilm transistors (TFTs). Although the high leakage current is a major issue in the performance of conventional MIC-TFTs since Ni contamination induces deep-level state traps, it can be greatly improved by using well-known technologies to reduce Ni contamination. However, for activematrix organic light-emitting diode (AMOLED) display applications, the bias reliability and thermal stability are major concerns especially when devices are operated under a hot carrier condition and in a high-temperature environment. It will be interesting to determine how the bias reliability and thermal stability are affected by the reduction of Ni concentration. In the study, the effect of Ni concentration on bias reliability and thermal stability was investigated. We found that a device exhibited high immunity against hot-carrier stress and elevated temperatures. These findings demonstrated that reducing the Ni concentration in MIC films was also beneficial for bias reliability and thermal stability.

原文English
文章編號011301
期刊Japanese Journal of Applied Physics
51
發行號1
DOIs
出版狀態Published - 1 一月 2012

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